kst-2117-000 1 DN100S npn silicon transistor features extremely low collector-to-emitter saturation voltage ( v ce (sat) = 0.15v typ. @i c /i b =400ma/20ma) suitable for low voltage large current drivers complementary pair with dp100s switching application ordering information type no. marking package code DN100S n03 sot-23f outline dimensions unit : mm s s e e m m i i c c o o n n d d u u c c t t o o r r pin connections 1. base 2. emitter 3. collector 0.4 0.05 0~0.1 3 1 2 1.90 bsc 2.9 0.1 0.15 0.05 2.4 0.1 0.9 0.1 1.6 0.1
kst-2117-000 2 DN100S absolute m aximum r atings (ta=25 c) characteristic symbol ratings unit collector-base voltage v cbo 15 v collector-emitter voltage v ceo 12 v emitter-base voltage v ebo 5 v collector current i c 1 a collector dissipation p c 200 mw junction temperature t j 150 c storage temperature t stg -55~150 c electrical characteristics (ta=25 c) characteristic symbol test condition min. typ. max. unit collector-base breakdown voltage bv cbo i c =50 m a, i e =0 15 - - v collector-emitter breakdown voltage bv ceo i c =1ma, i b =0 12 - - v emitter-base breakdown voltage bv ebo i e =50 m a, i c =0 5 - - v collector cut-off current i cbo v cb =12v, i e =0 - - 0.1 m a emitter cut-off current i ebo v eb =5v, i c =0 - - 0.1 m a h fe1 v ce =1v, i c =100ma 200 - 450 - dc current gain h fe2 v ce =1v, i c =1a 70 - - - collector-emitter saturation voltage v ce(sat) i c =400ma, i b =20ma - - 0.25 v base-emitter saturation voltage v be(sat) i c =400ma, i b =20ma - - 1.2 v transition frequency f t v ce =5v, i c =50ma - 260 - mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz - 5 - pf
kst-2117-000 3 DN100S fig. 3 h fe - i c fig. 4 v ce( sat)- i c fig. 1 p c - t a electrical characteristic curves fig. 2 i c - v be
|
